We are honored to demonstrate Organic Photodetector on Si-Substrate which shows outstanding spectral sensitivity beyond 1000nm with CMOS industry manufacturer.
2021/12/29
Using CMOS-compatible bottom electrodes on the Si substrate, OPD devices using PD-940 Proprietary Functional Ink of Raynergy Tek records an EQE of ∼50% at 940 nm and ∼70% at 1030 nm respectively, indicating the possibility of using organic semiconductor technology to extend the sensitivity of the CMOS image sensor beyond 1000 nm, which can be applied in high-performance NIR/SWIR. The work was published in ACS Applied Electronics Materials at Dec. 29th in 2021.
To read more details, please visit https://doi.org/10.1021/acsaelm.1c00915