ASCA and Raynergy Tek are strengthening their partnership
By using Raynergy Tek’s newest semiconductor materials, non-fullerene acceptor-based organic semiconductors and a new generation of hole transport layer, ASCA has achieved significantly higher OPV efficiency, beyond 70 watts per square meter while maintaining its durability. This is a 40 percent power increase compared to today’s industrial product.
This is a class that starts at 7 pm, a group of undergraduate students who are passionate about science, stay at the laboratory and eager to learn how science makes things happen!
We have achieved an important milestone in our Novel Organic semiconductor (OSCs) materials development. An OSCs material, PD-1300 which demonstrated good spectral response at wavelength of 1300 nm was developed by our R&D team successfully. The photodiode’s dark current density records an impressive value of 3x10-7 A/cm2 and detectivity tabulated to be 9.3 x 1010 Jones at voltage bias of -2 V, respectively, which to our knowledge is the best results of known reported for OPD-based SWIR device performance.
A photoactive layer with narrowband IR spectral response is crucial for IR sensor, which can realize a color-filter free photodetector to avoid ambient light interference and impaired EQE by color-filter.
One of the widely known weakness of Organic Materials is their thermal stability that makes it vulnerable to be integrated into typical wafer processing. In Q1 2022, Our R&D group has intensively researched into Organic Semiconductor with high temperature tolerance above 200 degreeC which is the typical optical layer processing temperature in CMOS manufacturing processes or backend processes.
Using CMOS-compatible bottom electrodes on the Si substrate, OPD devices using PD-940 Proprietary Functional Ink of Raynergy Tek records an EQE of ∼50% at 940 nm and ∼70% at 1030 nm respectively, indicating the possibility of using organic semiconductor technology to extend the sensitivity of the CMOS image sensor beyond 1000 nm, which can be applied in high-performance NIR/SWIR. The work was published in ACS Applied Electronics Materials at Dec. 29th in 2021.
By using top illuminating device architecture which matches the typical processing structure of images sensors, coupling with optimized interfacial layer, a non-optical modulated of QE of 74% was recorded, indicating the potential of integrating OPD with an ROIC for real imaging product. The collaborated works has been published in Advanced Optical Materials at Nov. 1st in 2021.
Together they will develop a manufacturing solution for a variety of sensor applications based on a combination of Raynergy’s expertise in organic semiconductor synthesis and device structuring along with Orthogonal’s proprietary photolithographic patterning technology that can be used to structure micron scale sensing elements using industry standard equipment.
Emerging （1）NIR Photodiode sensing t 1000nm with QE of 67% （2）PCE 15.1% for all solution processed OPV and (3) PCE 17.8% when use as HTM of Perovskite Solar cell has been recorded using our new Interlayer HTL product. Highly versatile. The robust solution processable interlayer based on Pedot:PFI has been carefully formulated and works as good as the inorganic counterparts has recently been published in Journal of Materials Chemistry: A.
